| PART |
Description |
Maker |
| MCH5811 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5812 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| NSQ03A03L |
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
ETC
|
| C30T04QH |
SBD
Schottky Barrier Diode
|
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| MA10704 |
Schottky Barrier Diodes (SBD) 0.2 A, 20 V, SILICON, SIGNAL DIODE
|
Panasonic Corporation
Panasonic, Corp.
|
| UPA508TE-T2 |
Nch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| CPH5702 |
TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| MA3S795E MA3S795D MA795WK MA795WA |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| CPH6702 1160 |
TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| FW507 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5855 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
